Comprehensive Software Analysis. Manage Business and Software Risk. All Synopsys. Virtually model the fabrication process of semiconductor devices Process simulation deals with modeling the fabrication steps of semiconductor devices such as transistors and focuses on front end of line manufacturing steps.
Back-end-of-line steps are handled with tools like Sentaurus Interconnect. Sentaurus Process. Sentaurus Topography. By Ivan Santos , Stephanie Michelle Sanchez , Stella Quinones This tool calculates the electron and hole mobility in a semiconductor as well as its resistivity as a function of doping at room temperature K using an empirical curve fit model for the electron and hole mobility. The relationship between flatband voltage, threshold voltage, maximum depletion width and maximum surface potential can be emphasized by instructor assignment design.
This tool allows users to visualize the effects of doping on carrier concentration in bulk silicon. It utilizes the non-degenerate Maxwell statistics to explore the effects of doping and temperature on carrier concentration and the energy band diagram. By Stephanie Michelle Sanchez , Ivan Santos , Stella Quinones The tool calculates the electron and hole concentration for a semiconductor material for five special cases: intrinsic, N-Type, P-Type, high temperature, and compensated.
Specifically, this tool investigates the effect of different parameters and conditions on oxidation process by looking into the oxidation flux. This simulation tool simulates the dopant diffusion process by solving the partial differential equations. The tool gives users the freedom to adjust critical parameters and conditions in the process, such as the initial doping profile, time, temperature, length, and so on.
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